dm nh6021s ps q document number: ds 38394 rev. 4 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q 60v 175c n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) max i d max t c = + 25c 60v 2 3 m? @ v gs = 10 v 5 5 a 28 m? @ v gs = 4.5 v 4 8 a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? driving s olenoids ? driving r elays ? power m anagement f unctions features and benefits ? rated to +175c C ideal for high ambient temperature environments ? 100% unclamped inductive switching C ensures more reliable and robust end application ? high conversion efficiency ? low r ds(on) C minimizes on - state losses ? low input capacitance ? fast switching speed ? lea d - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di5060 - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm nh 6 0 2 1 s ps q - 13 p ower di5060 - 8 2 , 500 / tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l br + cl) and <1000ppm antimony compounds. 4. a utomotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions.html . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic p ower di5060 - 8 pin1 s d d g d d s s = manufacturers marking s d s s g d d d h6021s s yy ww powerdi is a registered trademark of diodes incorporated . green
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v (note 8 ) t c = + 25 c t c = + 10 0 c i d 5 5 3 9 a maximum continuous body diode f orward current (note 8 ) i s 5 5 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 88 a avalanche current , l = 0. 1m h (note 9 ) i a s 35 a avalanche energy , l = 0. 1m h (note 9 ) e a s 6 4 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) t a = +25c p d 1.6 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 96 c/w total power dissipation (note 7 ) t a = +25c p d 3.0 w thermal resistance, junction to ambient (note 7 ) s teady state r ? ja 50 c/w total power dissipation (note 8 ) t c = + 25 c p d 53 w thermal resistance, junction to case (note 8 ) r ? j c 1.5 c/w operating and storage temperature range t j, t stg - 55 to + 175 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 10 ) drain - source breakdown voltage bv dss 6 0 - - v v gs = 0v, i d = 250a dss - - 1 ds = 6 0 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 10 ) gate threshold voltage v gs( th ) 1 - 3 v v ds = v gs , i d = 250 a ds(on) - 12 23 m? gs = 10 v, i d = 12 a - 18 28 v gs = 4.5 v, i d = 12 a diode forward voltage v sd - 0. 75 1.2 v v gs = 0v, i s = 2 0 a dynamic characteristics (note 11 ) input capacitance c iss - 1 , 016 - pf v ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss - 153 - reverse transfer capacitance c rss - 76.8 - gate resistance r g - 2.5 - ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g - 9.5 - nc v ds = 30 v, i d = 20 a total gate charge ( v gs = 10 v ) q g - 19.7 - gate - source charge q gs - 3.6 - gate - drain charge q gd - 4.8 - turn - on delay time t d( on ) - 4.2 - n s v dd = 30 v, v gs = 10 v, i d = 10 a , r g = 4.7 r - 13 - turn - off delay time t d( off ) - 27.5 - turn - off fall time t f - 15.3 - body diode reverse recovery time t rr - ? - ? f = 20 a, di/dt = 1 0 0a/s rr - ? - ? notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8 . thermal re sistance from junction to soldering point (on the exposed drain pad). 9 . i as and e as rating s are based on low frequency and duty cycles to keep t j = + 25 c . 10 . short duration pulse test used to minimize self - heating effect. 1 1 . guaranteed by design. not subject to product testing.
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a t = 175c a i d , drain current (a) i , drain current (a) d figure 5 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0 5 10 15 20 25 30 t = - 55c a t = 25c a t = 85c a t = 125c a t = 175c a v = 10v gs t = 150c a r ds(on) , drain - source on - resistance ( ? v gs = 10v v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 v = 3.0v gs v = 3.5v gs v = 6.0v gs v = 10 gs v = 4.0v gs 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = 4.5v gs v = 5.0v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 12 14 16 18 20 22 24 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20 i = 12a d i = 15a d t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v i = 12a gs d v = v i = 15a gs d 10
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q i s , source current (a) 175 c 1 50 c 1 25 c 85 c 25 c - 55 c t , junction temperature (c) figure 8 gate threshold variation vs. junction temperature j ?? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v gs(th) , gate threshold voltage (v) 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 c j , junction capacitance (pf) v ds , drain - source voltage (v) figure 11 typical junction capacitance f=1mhz c iss c oss c rss t j , junction temperature ( o c) t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v i = 12a gs d v = v i = 15a gs d 10 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 125 C a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150 C a t = 175 C a t = -55 C a t = 25 C a t = 85 C a q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 4 8 12 16 20 v = 30v i = a ds d 20 t , junction temperature (c) j figure 10 avalanche energy e , a v a l a n c h e e n e r g y ( m j ) a s 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 25 50 75 100 125 150 175 i = 10a d i = 15a d i = 6a d
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14 transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 1.46 (pk) , peak transient power (w) t1, pulse duration time (sec) figure 13 single pulse maximum power dissipation single pulse r jc = 1.46 /w r jc (t) = r(t) * r jc t j - t c = p*r jc (t)
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. p ower di5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3
dm nh6021s ps q document number: ds 38394 rev. 4 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6021s ps q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this docu ment is written in english but may be translated into multiple languages for reference. only the english version of this docu ment is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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